| PART |
Description |
Maker |
| BLF4G20LS-110B |
From old datasheet system
UHF power LDMOS transistor 110 W LDMOS power transistor for base station applications at frequencies
|
Philips Semiconductors
NXP Semiconductors N.V.
|
| BLF6G13L-250P BLF6G13LS-250P |
Product description250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz.
Power LDMOS transistor BLF6G13LS-250P<SOT1121B (CDFM4)|<<http://www.nxp.com/packages/SOT1121B.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| BLF7G27LS-100 BLF7G27L-100 |
Power LDMOS transistor
100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
|
NXP Semiconductors N.V.
|
| BLF871S112 BLF871-15 |
A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.
UHF power LDMOS transistor
|
NXP Semiconductors N.V.
|
| BLF578XR |
Product descriptionA 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band.
Power LDMOS transistor BLF578XR<SOT539A (SOT539A)|<<http://www.nxp.com/packages/SOT539A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| MAPL-000978-0075LF MAPL-000978-0075LN MAPL-000978- |
LDMOS Pulsed Power Transistor 75W, 978 MHz, 400μs Pulse, 1% Duty
LDMOS Pulsed Power Transistor 75W, 978 MHz, 400楼矛s Pulse, 1% Duty
LDMOS Pulsed Power Transistor
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| LK822-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
| BLF6G20LS-140 |
Power LDMOS transistor
|
NXP Semiconductors
|
| BLF6G22LS-180RN |
Power LDMOS Transistor
|
Philips Semiconductors
|
| BLP15M7160P-15 |
Power LDMOS transistor
|
NXP Semiconductors
|
| BLF7G20L-250P-15 |
Power LDMOS transistor
|
NXP Semiconductors
|
